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相比于传统的All-pass型微环谐振腔硅基电光调制器,Add-drop型微环谐振腔可提供更多的设计自由度,使调制器在不改变杂质掺杂浓度的情况下就能在调制带宽和消光比性能上获得均衡考虑.本文设计了基于Add-drop型微环谐振腔的高速、且在低调制电压下实现大消光比的硅基电光调制器,所用微环谐振腔的半径仅仅为20μm.重点分析了直波导与微环谐振腔的耦合对调制器性能的影响,发现较小的Drop端耦合系数有利于消光比的提高,但是不能同时达到最佳的调制带宽,因此设计上存在一个带宽和消光比性能上的折中考虑.根据优化设计的结果进行了实际器件的制作和测试.静态光谱测试表明,在3 V反向偏置电压的作用下,调制器的消光比最大可达12 dB.动态电光响应测试中,在仅仅1.2 V的信号幅值电压下测得了8 Gbps数据传输速率的清晰眼图.
Compared with the traditional All-pass micro-ring resonator silicon-based electro-optic modulator, Add-drop micro-ring resonator can provide more design freedom, so that the modulator without changing the impurity doping concentration of the case Which can balance the modulation bandwidth and extinction ratio performance.This paper designs a silicon-based electro-optic modulator based on the high-speed Add-drop micro-ring resonator and achieving a large extinction ratio at a low modulation voltage. The micro-ring resonator The radius is only 20μm.The influence of the coupling between the direct waveguide and the micro-ring resonator on the performance of the modulator is analyzed emphatically. It is found that the smaller Drop coupling coefficient is conducive to the increase of extinction ratio, but can not reach the optimal modulation bandwidth at the same time, Therefore, there is a tradeoff between bandwidth and extinction ratio performance.According to the results of the optimized design, the actual devices are fabricated and tested.Static spectrum tests show that under the action of 3 V reverse bias voltage, The extinction ratio is up to 12 dB. In the dynamic electro-optic response test, a clear eye diagram of the 8 Gbps data rate was measured at a signal amplitude of only 1.2 V.