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采用两管模型分析了新型深亚微米SOI推进型栅控混合管的工作机制 ,该器件有效地改善了传统MOS器件中提高速度和降低功耗之间的矛盾 ,并且大大提高了输出电阻 .在此基础上提出了该器件的亚阈电流模型 .模型中考虑了横向非均匀掺杂对体效应、短沟效应及迁移率的影响 .在考虑可动电荷影响的情况下进行准二维分析 ,求解表面势 ,进而求出包括扩散分量和漂移分量的亚阈电流 .模型计算结果得到良好的验证 ,正确反映了SOI推进型栅控混合管的电流特性 .该模型同时对POCKET注入深亚微米MOSFET的电流模拟有重要参考意义 .
A two-tube model is used to analyze the working mechanism of the new deep submicron SOI propulsion gated mixing tube. This device effectively improves the conflict between increasing speed and reducing power consumption in traditional MOS devices, and greatly increases the output resistance. The subthreshold current model of the device is proposed, and the influence of lateral heterogeneity doping on the bulk effect, short-groove effect and mobility is taken into account.The quasi-two-dimensional analysis is carried out considering the influence of movable charge, And the subthreshold current including the diffusion component and the drift component is obtained.The model calculation results are well verified and correctly reflect the current characteristics of the SOI propulsion gated hybrid tube.The POCKET is injected into the deep submicron MOSFET The current simulation has important reference value.