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研制一种多晶硅压力传感器．它采用一氧化硅介质膜隔离代替ｐ－ｎ结隔离，提高了工作温度；通过控制掺杂浓度，改善了温度特性．实验表明，该传感器灵敏度高，工作温限高，温度漂移小．
Developed a polysilicon pressure sensor. It uses silicon oxide dielectric film isolation instead of p-n junction isolation, increased operating temperature; by controlling the doping concentration, improved temperature characteristics. Experiments show that the sensor has high sensitivity, high temperature limit and small temperature drift.