氮化物隔离的改进——硅局部氧化法

• 作 者: 科兵
• 出 处: 半导体情报
• 发表日期: 1971年11期
• 关键词: 有源区 有源元件 氮化物 微米 氮化硅 集成电路 淀积 长厚 绝缘体 薄层

由于氮化硅抗氧化能力强,用氮化物薄层掩蔽集成电路片的有源区,然后有可能在衬底上精确地局部淀积生长厚二氧化硅。硅局部氧化法是将氧化部分埋入砖中。其优点是,在有源区窗口的边缘只有很小的阶梯。但更重要的是埋入硅中的氧化物作为绝缘体节省不少地方,一个40微米的有源元件每边可节省10微米。

Due to its high resistance to oxidation by silicon nitride, a thin layer of nitride masks the active area of ​​the integrated circuit chip and then it is possible to grow a thick layer of silicon dioxide locally on the substrate by precise deposition. Partial oxidation of silicon is the oxidation of the part buried in the brick. The advantage is that there is only a small step on the edge of the active area window. But more importantly, the oxide buried in silicon saves a lot of space as an insulator, saving 40 microns on each side of a 40-micron active component.