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ＩＴＯ膜的结构直接决定其光电性质，因而对其结构的研究就显得极其重要。本文报 道了不同衬底偏压和不同退火温度对ＩＴＯ膜结构的影响。结果表明，一定负偏压有助 于（２２２）晶面择优生长，一定退火温度有助于（６２２）晶面择优生长。退火与否，对膜中 Ｉｎ、Ｓｎ含量影响不大。
The structure of ITO film directly determines its photoelectric properties, so the study of its structure becomes extremely important. This paper reports the effect of different substrate bias and annealing temperatures on the ITO film structure. The results show that a certain negative bias is helpful to the preferential growth of (222) crystal plane. A certain annealing temperature contributes to the preferred growth of (622) crystal plane. Annealing or not, the film of In, Sn content has little effect.