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图面的简单说明图面系本发明的实例表示。图1系致冷器本体的断面图。图2系整个装置的局部剖视。发明的详细说明在某种特定的半导体绝缘物(例如铬掺金)上加上电压并冷却之,随着冷却程度的不同,该半导体的红外线感受能力将发生变化,这是众所周知的。应用此原理的红外线探测装置,现在已应用在夜晚的特殊用途中。本发明提供了把上述装置中需冷却的半导体极度冷却的方法,而使该装置的红外线灵敏度显著地增加。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. Is a diagram showing an example of the present invention. Figure 1 is a cross-sectional view of the refrigerator body. Figure 2 shows a partial cross section of the entire device. DETAILED DESCRIPTION OF THE INVENTION By applying a voltage and cooling to a particular semiconductor insulator, such as chromium-doped gold, it is well-known that the infrared sensing capability of the semiconductor will vary with the degree of cooling. Infrared detection device using this principle has now been used in special applications at night. The present invention provides a method of extremely cooling a semiconductor to be cooled in the above apparatus so that the infrared sensitivity of the apparatus is significantly increased.