Variation of efficiency droop with quantum well thickness in In GaN/GaN green light-emitting diode

• 作 者: 刘炜 赵德刚 江德生 陈平 刘宗顺 朱建军 李翔 梁锋 刘建平 杨辉
• 机 构: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of
• 出 处: Chinese Physics B
• 发表日期: 2015年12期
• 关键词: recombination jointly luminescence versus monotonic localization relaxation capt

In GaN/GaN multiple quantum well(MQW) green light-emitting diodes(LEDs) with varying In GaN quantum well layer thickness are fabricated and characterized. The investigation of luminescence efficiency versus injection current reveals that several physical mechanisms may jointly influence the efficiency droop, resulting in a non-monotonic variation of droop behavior with increasing quantum well(QW) thickness. When the QW is very thin, the increase of In GaN well layer thickness makes the efficiency droop more serious due to the enhancement of polarization effect. When the QW thickness increases further, however, the droop is alleviated significantly, which is mainly ascribed to the enhanced nonradiative recombination process and the weak delocalization effect.

Inven GaN / GaN multiple quantum well (MQW) green light-emitting diodes (LEDs) with varying In GaN quantum well layer thickness are fabricated and characterized. The investigation of luminescence efficiency versus injection current reveals that several physical mechanisms may jointly influence the efficiency droop , resulting in a non-monotonic variation of droop behavior with increasing quantum well (QW) thickness. When the QW is very thin, the increase of GaN well layer thickness makes the efficiency droop more serious due to the enhancement of polarization effect. When the QW thickness increases further, however, the droop is alleviated significantly, which is mainly ascribed to the enhanced nonradiative recombination process and the weak delocalization effect.