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对Si肖特基势垒二极管的钝化技术进行了研究。研究了不同淀积温度、气体流量、射频功率以及气体压力等工艺技术条件下,淀积PECVD SiO_2和LPCVD Si_3N_4膜的介电强度E、介电常数ε_r、耐压V、针孔密度、漏电流I、内应力σ、片间均匀性以及片内均匀性等性能。研究了PECVD SiO_2膜的增密技术。提出了一种应力小、漏电流小且抗辐照能力较好的PECVD SiO_2/LPCVD Si_3N_4复合介质膜钝化工艺方法和技术条件,提高了肖特基势垒二极管的性能。
Passivation technology of Si Schottky barrier diode has been studied. The dielectric strength E, dielectric constant ε_r, dielectric strength V, pinhole density, leakage current of PECVD SiO_2 and LPCVD Si_3N_4 films deposited by different deposition temperature, gas flow, RF power and gas pressure were investigated. I, internal stress σ, inter-slice uniformity, and intra-slice uniformity. The densification technology of PECVD SiO_2 film was studied. A passivation method and technology of PECVD SiO_2 / LPCVD Si_3N_4 composite dielectric film with small stress, small leakage current and good anti-radiation ability are proposed and the performance of the Schottky barrier diode is improved.