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METAL/SEMICONDUCTOR interfaces have attracted widespread interest for a long time. Tradi-tional techniques, such as photoelectric and capacitance-voltage method, are proved to beeffective in determining some electrical properties of interfaces. However, they usually providespatial average results over macroscopic dimensions. With the rapid development of microelec-tronics, there is an urgent need to investigate electrical properties of the M/S interfaces on ananometer scale.