CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPI

• 作 者: X.Q. Liu S.Y. Ma
• 出 处: Acta Metallurgica Sinica(English Edition)
• 发表日期: 2002年01期
• 关键词: SOLID subsequent annealed implanted ternary epitaxy annealing crystalline implan

Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C+ ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.

Si-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C + ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C occupied areas and no SiC was formed .