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The influence of interface states on a two-Dimensional Electron Gas (2DEG) in anAlGaAs/GaAs High Electron Mobility Transistor (HEMT) has been studied. In this paper atwo-dimensional quantum model of the HEMT is first presented by considering the interfacestates effect on the channel electrons of the HEMT. The electron concentration in the channelof the HEMT is obtained by solving Schrodinger and Poisson equations self-consistently. Thesimulated results reveal that the distribution of 2DEG changes with the interface state density.Our analysis has also shown that the additional scattering centers increase with the interfacestate density. Therefore, the channel electron mobility and the transconductance of HEMTdecrease with increasing interface state density.
The influence of interface states on a two-dimensional Electron Gas (2DEG) in anAlGaAs / GaAs High Electron Mobility Transistor (HEMT) has been studied. In this paper atwo-dimensional quantum model of the HEMT is first presented by considering the interface effect on the channel electrons of the HEMT. The electron concentration in the channel of the HEMT is obtained by solving Schrodinger and Poisson equations self-consistently. Thesimulated results reveal that the distribution of 2DEG changes with the interface state density. Our analysis has also shown that the additional scattering centers increase with the interfacestate density. Thus, the channel electron mobility and the transconductance of HEMT decrease with increasing interface state density.