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The GalnAsSb quaternary alloys for 2～4 μm long wavelength optoelectronics have been prepared byMOCVD.The growth of buffer layers and the employment of GaSb/GaAs and GaSb/GaSb hybridsubstrates are mentioned,which effectively improve the properties of GalnAsSb epilayers.In order to controlthe epitaxial growth of GaSb and GalnAsSb,emphasis is given on the deposition rates,growth temperaturesand the relationship between growth conditions and the distribution coefficients of In and Sb.The experimen-tal solid compositions in this work are predicted by the thermodynamic calculations.Whether the growth ofGalnAsSb epilayers is controlled by chemical reactions or by mass diffusions depends on growth temperatures.This argument is verified by kinetic considerations.The FWHMs of the DCXD (double crystal X-raydiffraction)spectra of GalnAsSb epilayers grown on GaSb/GaSb and GaSb/GaAs hybrid substrates areabout 200～300 arcsec and 800 arcsec respectively.The unintentionally doped GalnAsSb epilayers have themobilities of μp=100～240 cm~2/V·s at 300 K.The corresponding wavelength ofMOCVD GaInAsSb alloysis calculated from EPMA(electronic probe microanalysis)data and determined by FTIR(Fourier transformedinfrared spectroscopy)measurement.
The GalnAsSb quaternary alloys for 2 ~ 4 μm long wavelength optoelectronics have been prepared byMOCVD.The growth of buffer layers and the employment of GaSb / GaAs and GaSb / GaSb hybridsubstrates are mentioned, which effectively improve the properties of GalnAsSb epilayers.In order to controlthe epitaxial growth of GaSb and GalnAsSb, emphasis is given on the deposition rates, growth temperatures and the relationship between growth conditions and the distribution coefficients of In and Sb. the experimen-tal solid compositions in this work are predicted by the thermodynamic calculations. Hether the growth ofGalnAsSb epilayers is controlled by chemical reactions or by mass diffusions depends on the growth temperatures. This argument is verified by kinetic considerations. The FWHMs of the double X-ray diffraction spectra of GalnAsSb epilayers grown on GaSb / GaSb and GaSb / GaAs hybrid The substrates areabout 200 ~ 300 arcsec and 800 arcsec respectively. The unintentionally doped GalnAsSb epilayer s have these properties of μp = 100 ~ 240 cm ~ 2 / V · s at 300 K. The corresponding wavelengths of MOCVD GaInAsSb alloysis calculated from EPMA (electronic probe microanalysis) data and determined by FTIR (Fourier transformed infrared spectroscopy) measurement.