论文部分内容阅读
设计研制了一种新型的低噪声分布式放大器,采用了栅长为1μm的低噪声复合沟道Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT(CC-HEMT).给出了低噪声分布式放大器的仿真和测试结果.测试结果显示低噪声分布式放大器在2~10GHz频率范围内,输入和输出端口驻波比均小于2.0,相关增益大于7.0dB,带内增益波纹小于1dB.在2~6GHz频率范围内,噪声系数小于5dB;在2~10GHz频率范围内,噪声系数小于6.5dB;测试结果与仿真结果较吻合.
A new type of low noise distributed amplifier is designed and fabricated using low noise composite channel Al0.3Ga0.7N / Al0.05Ga0.95N / GaN HEMT (CC-HEMT) with a gate length of 1μm. The low noise Distributed amplifier simulation and test results show that the low noise distributed amplifier in the 2 ~ 10GHz frequency range, the input and output port standing wave ratio are less than 2.0, the correlation gain is greater than 7.0dB, the gain band ripple is less than 1dB. The noise figure is less than 5dB in the frequency range of 2 ~ 6GHz. The noise figure is less than 6.5dB in the frequency range of 2 ~ 10GHz. The test results are in good agreement with the simulation results.