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一、引言合金法形成欧姆接触是半导体工艺中常用的方法之一。多年来我国广泛使用的小功率硅整流二极管和稳压二极管管芯部分就是分别用铝丝、金锑片与硅片的两面接触,在合金炉内烧结而成。它具有工艺简单,生产效率高,成品率高及成本低的特点,但该工艺的一项致命缺点是需耗用大量的高纯黄金。如整洗二极管2CZ80～85、2CZ55等系列每百万只要耗用黄金2.65～5.9kg,稳压管2CW55每百万只要耗用3kg高纯金,因而开展节约
I. INTRODUCTION The formation of ohmic contact by the alloying method is one of the commonly used methods in semiconductor technology. Over the years our country widely used low-power silicon rectifier diodes and Zener diode die part is respectively with aluminum wire, gold antimony film and silicon on both sides of the contact, sintered in the alloy furnace. It has the characteristics of simple process, high production efficiency, high yield and low cost. However, a fatal disadvantage of this process is the need to consume a large amount of high-purity gold. Such as the whole wash the diode 2CZ80 ~ 85,2 CZ55 and other series consumes only 2.65 ~ 5.9kg per million gold, regulator 2CW55 consumes only 3kg of high-purity gold per million as a result of savings