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传统上,FET体二极管反向恢复行为采用双脉冲试验方法来评估。由于这种试验方法旨在得出Trr、Qrr和IRRM参数,因此,所施加的di/dt相对比较缓慢(100A/μs)。在一定程度上,缓慢的di/dt是因袭陈规,但同时也是因为随着di/dt的提高,寄生电感(Ldi/dt)会妨碍精确测定感兴趣的参数,从而加剧解析出感兴趣参数的难度。当今的功率电子器件都以实现最高效率为目标,因此,许多设计缩短了开关瞬态时间,并且以高于每微秒
Traditionally, the FET body diode reverse recovery behavior was evaluated using a two-pulse test. Since this test method aims to derive Trr, Qrr and IRRM parameters, the applied di / dt is relatively slow (100 A / μs). To a certain extent, the slow di / dt is due to regularity, but also because, as di / dt increases, parasitic inductance (Ldi / dt) can prevent accurate determination of the parameter of interest and thus aggravate the parameter of interest Difficulty. Today’s power electronics are all targeted at achieving the highest efficiency, so many designs reduce the switching transient time, and at higher than every microsecond