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采用低压金属有机化学气相外延设备进行了 1 3μm压应变量子阱材料、张应变量子阱材料和混合应变量子阱材料的生长研究 .通过x射线双晶衍射和光致发光谱对生长材料进行测试和分析 .基于四个压应变量子阱和三个张应变量子阱交替生长的混合应变量子阱 ( 4CW3TW)结构有源区 ,并采用 7°斜腔脊型波导结构以有效抑制腔面反射 ,经蒸镀减反膜后 ,半导体光放大器光纤 光纤小信号增益达 2 1 5dB ,在 12 80— 1340nm波长范围内偏振灵敏度小于 0 6dB .
The growth of 1 3μm PPT, tensile strain QWT and mixed strain QWT materials was investigated by low pressure metal-organic chemical vapor deposition equipment.The growth materials were tested and analyzed by x-ray double crystal diffraction and photoluminescence The active region of mixed strain quantum well (4CW3TW) based on four compressive strain quantum wells and three tensile strain quantum wells are alternately grown, and the 7 ° inclined ridge waveguide structure is used to effectively suppress the surface reflection. After the antireflective film, the optical gain of the optical fiber of a semiconductor optical amplifier reaches 215 dB, and the polarization sensitivity is less than 0 6 dB in the wavelength range of 1280 to 1340 nm.