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采用中能离子束辅助沉积（ＩＢＡＤ）技术，在单晶Ａｌ２Ｏ３（０００１）基片上沉积Ｍｏ膜，在ＧａＡＳ（００１）基片１２合成Ｆｅ１６Ｎ２薄膜用ＨＲＥＭ等研究了Ｍｏ膜－Ａｌ２Ｏ３（０００１）、Ｆｅ１６Ｎ２膜－ＧａＡｓ（００１）界面的显微结构结果表明：Ｍｏ膜的晶粒呈细小性状或纤维状，晶粒平均尺寸约８ｎｍ，Ｆｅ１６Ｎ２薄膜为等轴晶，晶粒平均尺寸约为１０ｎｍ，在Ｍｏ膜－Ａｌ２Ｏ３（０００１）界面及Ｆｅ１６Ｎ２薄膜－ＧａＡｓ（００１）界面处存在厚１０～１５ｎｍ的由基片原子及膜层原子组成的非晶过渡层在过渡层与薄膜界面处存在台阶，增加了薄膜的形核点，薄膜的致密度较高。
Mo film-Al2O3 (0001), Fe16N2 (0001) were deposited on single-crystal Al 2 O 3 (0001) substrate by Fenton process using ion-beam assisted deposition (IBAD) The microstructure of the film-GaAs (001) interface shows that the grain size of the Mo film is small or fibrous with an average grain size of about 8 nm. The Fe16N2 film is an equiaxed grain with an average grain size of about 10 nm. An amorphous transition layer consisting of substrate atoms and film atoms with a thickness of 10-15 nm exists at the interface of the film-Al 2 O 3 (0001) interface and the Fe 16 N 2 film-GaAs (001) interface at the interface of the transition layer and the film, The nucleation point, the higher the density of the film.