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本合同研究的宗旨在于设计、制造和评价一种全顶面接触的微波功率晶体管。该器件在1～1.5千兆赫的频段具有30瓦的脉冲输出,增益大于7分贝。本合同是制造射频功率晶体管三个组成部分中的第一部分,该器件采用了消除键合引线的匹配网络。TRW 公司目前拥有在2.0千兆赫下具有连续波输出25瓦的微波功率晶体管。该器件在1.5千兆赫下能输出35瓦的连续波功率,增益为8.0～8.5分贝,器件设计的主体是采用全顶面接触的器件结构。本报告涉及这项研究工作的设计、制造程序和进展情况。在第一个季度报告中讨论了全顶面接触的功率品体管的设计进展情况及其研制结果。还讨论了研制全顶面接触结构的工艺技术及新设计。二、顶面集电极接触的晶体管研制
The purpose of this contract study is to design, manufacture and evaluate a full top-contact microwave power transistor. The device has a 30-watt pulse output in the 1 to 1.5 GHz band with gain greater than 7 dB. This contract is the first of three components that make RF power transistors that use a matching network that eliminates bond wires. TRW currently owns microwave power transistors with continuous wave output of 25 watts at 2.0 GHz. The device can output 35 watts of CW power at 1.5 gigahertz with a gain of 8.0 to 8.5 dB. The device design is based on a device structure with full top contact. This report covers the design, manufacturing process and progress of this research. In the first quarterly report, we discussed the design progress of the power transistor in full top contact and the result of its development. Also discussed the development of full top contact structure technology and new design. Second, the top collector contact transistor development