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随着铜互连以及low-k电介质在超大规模集成电路中地广泛使用,low-k电介质的机械完整性及其对互连可靠性变得更加重要。影响介电膜的机械完整性和互连可靠性的因素包括介电膜的工艺制程,芯片与封装材料的相互影响,以及环境温度和湿度的影响。本文研究集中于了解环境温度和湿度对塑封硅器件中介电薄膜的可靠性影响。采用快速温度和湿度实验条件,对塑封硅器件中介电薄膜受水分和温度损伤的敏感性进行了分析。运用商业有限元(FEA)分析软件,对水分在塑封材料和硅器件中的扩散过程进行了建模及仔细分析。并对硅器件周边密封圈的防水分扩散效力进行了研究。通过这一系列实验与分析,对塑封硅器件中介电薄膜的温湿效应有了完整地了解,并提出和建立了相关的物理模型和经验公式。运用这物理模型和经验公式可对在各种使用环境温度和湿度条件下,塑封硅器件中介电薄膜的可靠性进行评估及分析。
With copper interconnects and the widespread use of low-k dielectrics in very large scale integrated circuits, the mechanical integrity of low-k dielectrics and their importance to interconnect reliability have become even more important. Factors that affect the mechanical integrity of the dielectric film and the reliability of the interconnection include the dielectric film process, the interaction between the chip and the encapsulation material, and the effects of ambient temperature and humidity. This paper focuses on understanding the influence of ambient temperature and humidity on the reliability of dielectric films in plastic silicon devices. The sensitivity of the dielectric thin film in plastic silicon device to moisture and temperature damage was analyzed using the rapid temperature and humidity experimental conditions. The commercial finite element (FEA) analysis software was used to model and carefully analyze the diffusion of water in plastic materials and silicon devices. The effectiveness of the water repellent diffusion of the sealing ring around the silicon device was also studied. Through this series of experiments and analysis, the temperature and humidity effects of the dielectric thin film in the plastic silicon device have a complete understanding, and put forward and established the related physical model and empirical formula. Use this physical model and empirical formula to evaluate and analyze the reliability of dielectric films in plastic packaged silicon devices under a wide range of operating ambient temperature and humidity conditions.