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本文主要描述了两相溶液法外延生长InGaAsP/InP系材料的实验方法及其结果。并给出了用该方法生长的InGaAsP/InP材料制作的1.3μm和1.5μm p-n结隔离条形激光器的参数特性。实验证明用两相溶液法外延生长InGaAsP/InP材料(特别对发射波长在1.5μm以上的InGaAsP/InP材料)具有组分均匀和重复性好等优点。
This paper mainly describes the experimental methods and results of epitaxial growth of InGaAsP / InP materials by two-phase solution method. The parametric characteristics of 1.3μm and 1.5μm p-n junction isolated bar lasers fabricated by InGaAsP / InP grown by this method are given. The experimental results show that the InGaAsP / InP materials (especially InGaAsP / InP materials with emission wavelength above 1.5μm) have the advantages of uniform composition and good repeatability by epitaxial growth by two-phase solution method.