硅-硅直接键合后硅片的机械减薄过程

• 作 者: 陈晨 杨洪星 何远东
• 机 构: 中国电子科技集团公司第四十六研究所,
• 出 处: 微纳电子技术
• 发表日期: 2015年06期
• 关键词: Si-Si direct bonding (SDB) mechanical thinning flatness bow warp

硅-硅直接键合硅片的机械减薄工艺对器件的性能有很大的影响。采用磨削、化学腐蚀和机械/化学抛光的方法对硅-硅直接键合硅片进行减薄加工,分析了减薄过程中各个工序键合片的平整度、弯曲度和翘曲度变化,并对减薄后硅片的厚度均匀性进行了考察。本次实验最终获得了几何参数良好、厚度满足要求且均匀的晶片。磨削过程会使弯曲度和翘曲度升高,可以通过化学腐蚀的方法降低弯曲度和翘曲度,化学腐蚀过程虽然使平整度升高,但可以通过机械/化学抛光的方法降低平整度。采用该减薄技术对直接键合硅片进行机械减薄具有可行性。

The mechanical thinning of silicon-silicon directly bonded wafers greatly affects the performance of the device. The silicon-silicon direct bonding silicon wafer was thinned by grinding, chemical etching and mechanical / chemical polishing methods. The changes of flatness, curvature and warpage of the bonded wafer during the thinning process were analyzed. The thickness uniformity of thinned wafers was also investigated. In this experiment, we finally get a wafer with good geometrical parameters, uniform thickness and thickness. Grinding process will make the degree of curvature and warpage increased by chemical etching methods to reduce the degree of curvature and warpage, although the chemical corrosion process to increase the flatness, but by mechanical / chemical polishing methods to reduce flatness . The use of thinning technology for direct bonding of silicon thinning is feasible.