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提出一种用于电路模拟的基于表面势的多晶硅薄膜晶体管(poly-Si TFTs)的电流和电容分析模型.采用非迭代方法计算poly-Si TFTs表面势随端电压的变化,从而大大地提高了上述模型的计算效率.基于表面势的解析计算和薄层电荷方法,提出了包括小尺寸效应和翘曲效应的电流电压模型.同时,文中还提出了基于电荷的电容模型.电流和电容模型在线性区和饱和区都是连续和准确的,不需要没有物理意义的光滑处理.与实验数据的比较发现,模型和实验数据符合得较好,这也证明了所提出模型的准确性.并且,该模型适用于电路仿真器.
A current and capacitance analysis model of poly-Si TFTs based on surface potential for circuit simulation is proposed.The non-iterative method is used to calculate the surface potential of poly-Si TFTs with the change of terminal voltage, Based on the analytical calculation of surface potential and the thin-layer charge method, a current-voltage model including small-size effect and warpage effect is proposed. At the same time, a charge-based capacitance model is also proposed in this paper. The current and capacitance models are online Both the sex zone and the saturation zone are continuous and accurate without the need of smoothing without physical meaning.Comparing with the experimental data, it is found that the model is in good agreement with the experimental data, which proves the accuracy of the proposed model.And, This model is suitable for circuit simulators.