论文部分内容阅读
p-ZnO:As is prepared by the GaAs interlayer doping method.The potential applications of p-ZnO:As are eval-uated by applying it into the construction of a p-ZnO/n-GaN heterojunction,though its hall,electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of ～1017 cm-3 and a good optical quality.Ultraviolet random lasing is detected from the studied device under forward bias.Specific lasing modes are confirmed to originate from p-ZnO:As by further introducing the p-ZnO/MgO/n-GaN het-erostructure.The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO:As fabricated by using our methods.