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Ga_2O_3/ITO films were prepared by magnetron sputtering on quartz glass substrates.The transmittance and sheet resistance of ITO films and Ga_20_3/ITO films were measured by using a double beam spectrophotometer and four point probes.The effect of the ITO layer and Ga_2O_3 layer thickness on the electrical and optical properties of Ga_2O_3/ITO bi-layer films were investigated in detail.Ga_2O_3(50 nm)/ITO(23 nm) films exhibited a low sheet resistance of 323Ω/□and high deep ultraviolet transmittance of 77.6%at a wavelength of 280 nm.The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga_2O_3/ITO films.The Ga_2O_3 layer thickness has a marked effect on the transmission spectral shape of Ga_2O_3/ITO films in the violet spectral region.
Ga 2 O 3 / ITO films were prepared by magnetron sputtering on quartz glass substrates. The transmittance and sheet resistance of ITO films and Ga_20_3 / ITO films were measured by using a double beam spectrophotometer and four point probes. The effect of the ITO layer and Ga_2O_3 layer thickness On the electrical and optical properties of Ga 2 O 3 / ITO bi-layer films were investigated in detail. Ga 2 O 3 (50 nm) / ITO (23 nm) films exhibited a low sheet resistance of 323 Ω / □ and high deep ultraviolet transmittance of 77.6% at a wavelength of 280 nm. The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga_2O_3 / ITO films. The Ga_2O_3 layer thickness has a marked effect on the transmission spectral shape of Ga_2O_3 / ITO films in the violet spectral region.