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半导体硅是制备集成电路芯片和晶体管的重要材料,用硅制成的特种器件可用于检测光信息,由于其间接带隙的能带结构及禁带宽度仅1.12eV,因而本身无法由电致(EL)和光致(PL)发射高效率的可见光,使其在光电子器件领域的应用受到了限制.探索硅基材料的可见发光是材料科学领域中的重大研究课题.目前已有多种实现这一效应的方法,如电化学腐蚀的多孔硅和微波等离子体淀积的超细硅粉等,但是实际器件运用中所需材料必须具有良好的表面性质和均匀的内部结构.我们曾用Ar离子激光晶化技术使:a-Si:H/a-SiN_x:H多量子阱(MQW)结构中:a-Si:H阱层晶化成纳米晶粒,观察到室温可见光致发光现象,该方法可以人工设计并有效控制晶粒尺寸且材料内部结构均匀.本文将报道KrF准分子脉冲激光辐照a-Si薄膜制备室温呈现可见PL特性的硅晶粒的新方法,所用激光具有曝光面积大、能量高、作用时间短等特性,其晶化的均匀程度和效率均优于Ar离子激光,并且是一种“低温”、“干法”晶化过程,对衬底影响较小,从而有利于提高晶化样品性能,形成均匀的纳米晶粒,以期研究获得可见发光材料的新途径.
Semiconductor silicon is an important material for the production of integrated circuit chips and transistors. Special devices made of silicon can be used to detect optical information. Due to its band gap energy band gap and the forbidden band width of only 1.12 eV, the silicon itself can not be electrically induced EL) and photoluminescence (PL) to emit high-efficiency visible light, which limits its application in the field of optoelectronic devices.To explore the visible luminescence of silicon-based materials is a major research topic in the field of materials science, there are many ways to achieve this Effect method, such as electrochemical corrosion of porous silicon and microwave plasma deposition of ultra-fine silicon powder, but the actual device used in the material required must have good surface properties and uniform internal structure.We have used Ar ion laser In the structure of a-Si: H / a-SiN_x: H multiple quantum well (MQW), a-Si: H well layer is crystallized into nanocrystalline grains and a visible photoluminescence phenomenon is observed at room temperature. Design and effective control of the grain size and uniform internal structure of the material.This paper reports KrF excimer pulsed laser irradiation of a-Si film prepared at room temperature showing PL properties of a new method of silicon crystal, the laser has a large exposure area, energy High and short acting time, the uniformity and efficiency of crystallization are better than that of Ar ion laser, and it is a kind of “low temperature” and “dry” crystallization process, which has less influence on the substrate, which is beneficial to improve Crystallization of the sample properties, the formation of uniform nano-crystalline grains, in order to study new ways to obtain visible light-emitting materials.