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采用射频反应溅射技术在硅 (10 0 )衬底上制备了未掺杂和掺In的ZnO薄膜。掠角X射线衍射测试表明 ,实验中制备的掺In样品为ZnO薄膜。用X射线衍射仪、原子力显微镜和荧光分光光度计分别对两样品的结构、表面形貌和光致发光特性进行了表征 ,分析了In掺杂对ZnO薄膜的结构和发光特性的影响。与未掺杂ZnO薄膜相比 ,掺InZnO薄膜具有高度的C轴择优取向 ,同时样品的晶格失配较小 ,与标准ZnO粉末样品之间的晶格失配仅为 0 .16 % ;掺InZnO薄膜表面平滑 ,表面最大不平整度为 7nm。在掺In样品的光致发光谱中观察到了波长位于 4 15nm和 4 33nm处强的蓝紫光双峰 ,对掺In样品的蓝紫双峰的发光机理进行了讨论 ,并推测出该蓝紫双峰来源于In替位杂质和Zn填隙杂质缺陷。
The undoped and In-doped ZnO thin films were deposited on silicon (100) substrate by RF reactive sputtering. The grazing angle X-ray diffraction test shows that the In-doped samples prepared in the experiment are ZnO thin films. The structure, surface morphology and photoluminescence properties of the samples were characterized by X-ray diffraction, atomic force microscopy and fluorescence spectrophotometer respectively. The effects of In doping on the structure and luminescent properties of ZnO thin films were analyzed. Compared with the undoped ZnO film, the InZnO-doped films have a high C-axis preferred orientation and the lattice mismatch of the samples is small, with a lattice mismatch of only 0.16% with that of the standard ZnO powders. InZnO film surface is smooth, the maximum surface roughness is 7nm. In the photoluminescence spectra of the In-doped samples, the strong blue-violet doublet peaks at 4 15nm and 4 33nm were observed, and the luminescence mechanism of the blue-violet bimodal doped with In samples was discussed. Peaks originate from In substitutional impurities and Zn interstitial impurity defects.