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本文采用PECVD技术制备了SiO_xN_y薄膜。用光电子能谱仪和红外光谱仪等对薄膜的结构、组成和其它物理性质作了测量。对温度、功率等工艺参数对薄膜性质的影响作了研究。结果表明,该薄膜是一种非晶态无序结构的、具有良好的抗腐蚀和掩蔽特性的电绝缘介质膜。
In this paper, the PECVD technology was prepared SiO_xN_y film. The structure, composition and other physical properties of the films were measured using photoelectron spectroscopy and infrared spectroscopy. The effects of process parameters such as temperature and power on the properties of the films were studied. The results show that the film is an amorphous dielectric film with good anti-corrosion and masking properties.