Surface morphology of [110] a-plane GaN growth by MOCVD on [1■02] r-plane sapphire

• 作 者: 许晟瑞 郝跃 段焕涛 张进城 张金凤 周晓伟 李志明 倪金玉
• 机 构: Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xi
• 出 处: 半导体学报
• 发表日期: 2009年04期
• 关键词: sapphire MOCVD triangular opposed screening crystalline modulate polar ultraviol

Nonpolar a-plane [110] GaN has been grown on r-plane [1■02] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to the c-direction, this particular orientation is non-polar, and it avoids polarization charge, the associated screening charge and the consequent band bending. Both low-temperature GaN buffer and high-temperature AlN buffer are used for a-plane GaN growth on r-plane sapphire, and the triangular pits and pleat morphology come forth with different buffers, the possible reasons for which are discussed. The triangular and pleat direction are also investigated. A novel modulate buffer is used for a-plane GaN growth on r-plane sapphire, and with this technique, the crystal quality has been greatly improved.

Nonpolar a-plane [110] GaN has been grown on r-plane [1 ■ 02] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to the c-direction, this particular orientation low-temperature GaN buffer and high-temperature AlN buffer are used for a-plane GaN growth on r-plane sapphire, and the The triangular and pleat directions are also investigated. A novel modulate buffer is used for a-plane GaN growth on r-plane sapphire, and with this technique , the crystal quality has been greatly improved.