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采用射频－直流等离子化学气相沉积法制备类金刚石薄膜，用慢正电子湮灭技术研究了类金刚石薄膜中缺陷的深度分布，并系统研究了工艺参数对类金刚石薄膜中缺陷浓度的影响．实验结果表明，单晶Si衬底具有很高的缺陷浓度，类金刚石薄膜中的缺陷浓度较低．且缺陷均匀分布，薄膜表面存在一缺陷浓度较高的薄层，而膜一基之间存在一很宽的界面层，界面层内缺陷浓度随离衬底表面距离的增加而线性降低，到达薄膜心部后，缺陷浓度趋于稳定．类金刚石薄膜的缺陷浓度和膜－基界面层宽度都随负偏压的升高呈先降低、后增加再降低的变化趋势．薄膜中的缺陷浓度随混合气体中C2H2含量的升高而单调增大，但C2H2含量对界面层宽度没有影响．
Diamond-like carbon films were prepared by RF-DC plasma CVD. The depth distribution of defects in diamond-like carbon films was studied by slow positron annihilation technique. The effect of process parameters on the defect concentration in diamond-like carbon films was systematically studied. The experimental results show that the single crystal Si substrate has a high defect concentration and the defect concentration in the diamond-like carbon film is relatively low. And the defects are uniformly distributed. There is a thin layer with a higher defect concentration on the surface of the film, and a very wide interfacial layer exists between the films. The concentration of defects in the interfacial layer decreases linearly with the increase of the distance from the surface of the film, After the heart, the defect concentration tends to be stable. The defect concentration of diamond-like carbon films and the width of film-based interfacial layer decrease first and then decrease with the increase of negative bias voltage. The defect concentration in the film increases monotonously with the increase of C2H2 content in the mixed gas, but the content of C2H2 has no effect on the interface layer width.