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就IC、LSI的双层布线技术而言,采用代替以往用二氧化硅(以下记为SiO_2)作层间绝缘膜,用聚酰亚胺系树脂PIQ(注册商标,以下相同)的技术已获成功并且实用化。在其后的IC、LSI中,随着高密度、高集成化要求的增加,与器件进一步微型化的同时,采用三层以上多层布线的必要性引起了人们的重视。但是用SiO_2制作三层布线,存在如下几个问题。即:(1)用CVD(化学汽相淀积)形成SiO_2膜时,如图1所示的那样膜的剩余应力随着膜厚的增加急激地增大,所以堆集厚的SiO_2层容易产生裂纹;(2)由
As for the technology of double-layer wiring of ICs and LSIs, a technique of using a polyimide-based resin PIQ (registered trademark, hereinafter the same) instead of the conventional silica (hereinafter referred to as SiO_2) as an interlayer insulating film has been adopted Successful and practical. In the subsequent ICs and LSIs, the need for more than three layers of multi-layer wiring has drawn great attention as miniaturization of the device is accompanied by an increase in demands for high density and high integration. However, the use of SiO 2 three-layer wiring, there are several problems as follows. That is, (1) when the SiO 2 film is formed by CVD (Chemical Vapor Deposition), as shown in FIG. 1, the residual stress of the film increases sharply with the increase of the film thickness, so cracks tend to be generated in the thick SiO 2 layer ; (2) by