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本文研究了氮生长掺杂和离子注入掺杂金刚石薄膜的场电子发射性能．测试结果表明，两类样品均显示良好的发射性能，即开启电压低（５０～１５０Ｖ）、发射电流大（６～３０ｍ Ａ），但它们有不同的发射行为：注入掺杂样品存在发射电流的饱和与滞后、开启电压的前移现象，而生长掺杂样品的发射符合Ｆｏｗ ｌｅｒ－Ｎｏｒｄｈｅｉｍ 理论．实验还得到了用于生长场发射阴极薄膜的最佳掺杂氮碳流量比为～４２％ ．
In this paper, field emission properties of nitrogen-doped and ion-implanted diamond films were investigated. The test results show that both of the samples show good emission performance, ie, low on-voltage (50-150V) and large emission current (6-30mA), but they have different emission behaviors: Saturation and hysteresis, turn on the voltage forward phenomenon, while the growth of doped samples in line with the Fowler-Nordheim theory. Experiments have also resulted in the best doped N-C flux ratio for the field emission cathode film of ~ 42%.