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用两步浸渍染色法在单晶硅片上制备了室温光致发光多孔硅,膜层均匀,其等效折射率在2.0—2.4之间,测量了荧光激发谱和荧光发射谱以及Fourier变换红外透射谱,结果表明:浸渍染色多孔硅与阳极电化多孔硅特征一一对应,指出染色多孔硅的形成动力是中性NO_2的传递电子的催化作用,HNO_3的氧化和HF的氢化共同作用形成的化学染色多孔硅与阳极电化多孔硅具有相似的红外透射谱,分析了斑秃染色层的成因,认为染色多孔硅中有偏硅酸混合体的成分。
Room-temperature photoluminescent porous silicon was prepared on a monocrystalline silicon wafer by a two-step immersion dyeing method. The film was homogeneous and its equivalent refractive index was between 2.0 and 2.4. Fluorescence excitation spectra and fluorescence emission spectra were measured and Fourier transform infrared The results show that the impregnation of porous silicon corresponds positively to the characteristics of anodic electroporous porous silicon. It is pointed out that the formation kinetics of porous porous silicon is the catalytic action of neutral NO 2 electron transport. The chemical reaction of HNO 3 oxidation and HF hydrogenation Dyed porous silicon and anodized porous silicon have similar infrared transmission spectrum, the analysis of alopecia areata staining of the formation of porous silicon that there is a mixture of silicic acid components.