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国际整流器公司(International Rectifier,简称IR)推出两款新型HEXFET功率MOSFET:IRF7811W及IRF7822,将降压式及隔离式直流-直流拓扑结构的效率提高了3％。 IR先进的技术手段(Technology Toolbox),可为特定应用选择最佳的制造工艺,因此可提供多种业界领先的解决方案,应付当前的各种挑战。这些专用MOSFET采用新型带状沟槽工艺,IR早些时候曾推出基准平面器件。新工艺能让去耦器件导通电阻及电容,成功解决了要求极低导通电阻及栅电荷的功率MOSFET的制造问题。随着直流-直流电路的输出电压接近1V,工作电流会
International Rectifier (IR) introduced two new HEXFET power MOSFETs: the IRF7811W and the IRF7822, which increase the efficiency of step-down and isolated DC-DC topologies by 3%. IR's advanced Technology Toolbox, which selects the best manufacturing process for a given application, offers a wide range of industry-leading solutions to meet today's challenges. These dedicated MOSFETs feature a new ribbon trench process and IR introduced base plane devices earlier. The new process allows the decoupling device turn-on resistance and capacitance, the successful solution to the very low on-resistance and gate charge power MOSFET manufacturing problems. With DC-DC output voltage close to 1V, the operating current will be