Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs dete

• 作 者: 李永富 唐恒敬 李淘 朱耀明 姜佩璐 乔辉 李雪 龚海梅
• 机 构: State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Acad
• 出 处: 半导体学报
• 发表日期: 2010年01期
• 关键词: guard planar covering circle suppressed exactly modifying wafer Suppression resp

To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector,the structure of the detector was modified,and the small-diffusion-area diffusion method,circle-type covering contact and guard-ring were introduced.The laser-beam-induced-current(LBIC) technique was used to study the photo responsive characteristics of the photo-sensitive area of different detector structures.It was indicated that,by modifying the size of the diffusion area,the width of the circle-type covering contact,the distance between the guard-ring and the photo-sensitive area and the working status of the guard-ring,extension of the photo-sensitive area could be effectively suppressed,and the detector photo-sensitive area could be exactly defined.

To suppress the extension of the photo-sensitive area of ​​a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard-ring were introduced. -beam-induced-current (LBIC) technique was used to study the photo responsive characteristics of the photo-sensitive area of ​​different detector structures. It was indicated that, by modifying the size of the diffusion area, the width of the circle-type covering contact, the distance between the guard-ring and the photo-sensitive area and the working status of the guard-ring, extension of the photo-sensitive area could be suppressed, and the detector photo-sensitive area could be able to be fully defined.