Optical properties of a HfO_2/Si stack with a trace amount of nitrogen incorporation

• 作 者: 李叶 江婷婷 孙清清 王鹏飞 丁士进 张卫
• 机 构: State Key Laboratory of ASIC and System,Department of Microelectronics,Fudan University,
• 出 处: 半导体学报
• 发表日期: 2012年03期
• 关键词: stack annealing annealed ammonia incorporation incorporated alternating leakage

HfO_2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N(C_2H_5)(CH_3)]_4 and H_2O_2.A trace amount of nitrogen was incorporated into the HfO_2 through ammonia annealing.The composition,the interface stability of the HfO_2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO_2 during thermal treatment.With a nitrogen concentration increase from 1.41 to 7.45%,the bandgap of the films decreased from 5.82 to 4.94 eV.

HfO_2 films were deposited by atomic layer deposition through alternating pulsing of Hf [N (C_2H_5) (CH_3)] __4 and H_2O_2.A trace amount of nitrogen was incorporated into the HfO_2 through ammonia annealing.The composition, the interface stability of the HfO_2 / Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO_2 during thermal treatment. At a nitrogen concentration increase from 1.41 to 7.45%, the bandgap of the films decreased from 5.82 to 4.94 eV.