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激光技术的发展对减反膜提出了超高透过率的要求,基板的表面特征在高精度减反膜的设计与制造中不可忽略。选择熔融石英为基板,Ta2O5和SiO2为高低折射率膜层材料,针对在0°入射角下工作的532 nm激光减反膜进行设计与分析,得到膜层内的电场分布。在模拟计算中将基板的表面粗糙度等效为等比例混合膜,计算分析了理想设计条件下不同厚度界面层的V型减反膜,得到透过率与界面粗糙度的数值函数关系,最后利用数值优化的方法对理想设计进行修正,得到了存在界面层的减反膜修正结果,研究结果有助于实现超高透过率短波长激光减反膜的设计与制备。
The development of laser technology puts forward the requirements of ultra-high transmittance for anti-reflection film. The surface features of the substrate can not be neglected in the design and manufacture of high-precision anti-reflection film. Select fused silica as the substrate, Ta2O5 and SiO2 as high and low refractive index layer material, designed and analyzed 532nm laser antireflection film working at 0 ° incident angle to obtain the electric field distribution in the film. In the simulation calculation, the surface roughness of the substrate is equal to that of the mixed film. V-shaped antireflection film with different thickness under the ideal design conditions is calculated and analyzed, and the numerical function of the transmittance and interface roughness is obtained. Finally, The ideal design was modified by the numerical optimization method, and the results of modifying the antireflection film existed in the interfacial layer were obtained. The research results are helpful to the design and fabrication of ultra-high transmittance short wavelength laser anti-reflection film.