,Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer

来源 :中国物理B（英文版） | 被引量 : 0次 | 上传用户：ahcyw

【作者】

：

Hu Sheng-Dong Wu Xing-He Zhu Zhi Jin Jing-Jing Chen Yin-Hui

【机构】

：

College of Communication Engineering, Chongqing University, Chongqing 400044, China“,”National Labor

【出处】

：

中国物理B（英文版）

【发表日期】

：

2014年6期

【关键词】

：

silicon-on-insulator breakdown voltage interface charges electric field

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,Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer

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