论文部分内容阅读
AlGaN/GaN HEMT良好的功率特性虽然被大量报导,但其电流崩塌现象仍是一个令人困扰的问题,作者通过实验证明了导致其电流崩塌的一个因素.两个AlGaN/GaN样片被分别放在纯氮气和掺碳的氮气气氛中快速退火,利用XPS证明了后者中的碳元素含量远远大于前者.比较二者的I-V特性曲线,可发现碳杂质的引入可使AlGaN/GaN HEMT电流崩塌程度大大增加.分析表明:由碳杂质引入导致的深能级使得负栅压下俘获沟道中的载流子在正栅压下不能立刻释放,从而引起AlGaN/GaN HEMT中的电流崩塌现象.
Despite the extensive reports of good power characteristics of AlGaN / GaN HEMTs, the current collapse phenomenon remains a troubling issue and the authors have experimentally demonstrated a factor that causes the current to collapse. Two AlGaN / GaN samples are placed on Pure nitrogen and carbon-doped nitrogen were rapidly annealed, and XPS proved that the carbon content in the latter was far greater than the former. Comparing the IV characteristics of the two, it can be found that the introduction of carbon impurities can collapse the AlGaN / GaN HEMT current The analysis results show that the deep level caused by the introduction of carbon impurities makes the carriers in the capture channel under the negative gate voltage unable to release immediately under the positive gate voltage and cause the current collapse in the AlGaN / GaN HEMT.