The effects of the ambient pressure Pambient on the bubble characteristics of pulsed discharge in water are investigated. The simulation results show that, when
The steady state formed by the diffusion of plasma particles in an inhomogeneous dusty plasma is investigated theoretically and compared with our previous exper
The double heterostructure GaN/InGaN/GaN films with different thicknesses of the InGaN layer were grownat 780℃ or 800℃ by metal organic chemical vapour deposi
We have grown high density Co dusters with a narrow-sized distribution on the Si3N4(0001)-(8 × 8) surface. In the submonolayer regime, Co clusters tend to keep
We simulate the two-dimensional patte formation in surfactant-mediated epitaxy using a kinetic model, in which the nucleation and growth of the stable islands a
Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution.
Cu-8 wt.%Al eutectic alloy was undercooled by up to 187K (0.14 TE) using a drop tube technique. The crystal growth and phase selection mechanisms were investiga