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本文主要研究了超薄快速热氮化(Rapid Thermal Nitridation)SiO_2膜在高电场下的电特性和抗辐照特性,采用AES和XPS等技术分析了RTN SiO_2膜的成份和结构。与同厚SiO_2膜相比,RTN SiO_2膜具有许多明显的优点,在同样条件下,当电场强度E≈1.5×10~7V/cm时,击穿时间t_(bd)比SiO_2的约高两个量级;在经过剂量高达10~7rad的Co~(60)辐照后,SiO_2膜的界面态密度及漏电流均增大1—2个量级,而RTN SiO_2膜的变化非常小。
In this paper, the electrical properties and anti-radiation properties of the Rapid Thermal Nitridation (SiO 2) film under high electric field were studied. The composition and structure of the RTN SiO_2 film were analyzed by AES and XPS. Compared with the same thickness of SiO_2 film, RTN SiO_2 film has many obvious advantages. Under the same conditions, when the electric field intensity E≈1.5 × 10 ~ 7V / cm, the breakdown time t_ (bd) is about two higher than that of SiO_2 The density of interface states and the leakage current of SiO2 films increased 1-2 orders of magnitude after Co ~ (60) irradiation up to 10 ~ 7 rad, while the change of RTN SiO2 films was very small.