The Influence of Nitrogen and Boron Implant into Silicon Substrate on the Phase and Internal Stress

• 作 者: TAN Jun CAI Zhi-hai ZHANG Ping
• 机 构: National Key Laboratory for Remanufacturing
• 出 处: 材料保护
• 发表日期: 2004年期
• 关键词: boron nitride thin films ion implantation magnetron sputtering phase compressive

Cubic boron nitride(c-BN) film was deposited on a Si (100) substrate by the RF-magnetron sputtering.The mainly problems for fabrication of c-BN films are the low purity and high intrinsic compressive stress. In order to solve the two problems, the c-BN film with the buffer interlayer was deposited on the substrate which had been implanted with nitrogen and/or boron ions. The results show: the implantation of nitrogen ions can obviously increase c-BN content and reduce the internal stress slightly; while the implantation of boron shows no obvious improvement to the content of c-BN, which can reduce the internal stress in the film obviously. In addition, it is suggested that the implantation of nitrogen and boron shows the best result, which not only can increase the content of c-BN, but also reduce the internal stress in the c-BN film obviously.