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本文报导了硫化铅光导绝缘栅场效应晶体管的实验结果。它采用栅电极实现探测度的调制。加上一个负的栅电势便可耗尽n型PbS薄膜载流子,探测度提高200倍,而噪声则不变。在180°视场、300°K背景中,取得2×10~(10)厘米赫~(1/2)/瓦的探测度(173°K、500赫)。发现在实验室环境条件下经过18个月之后,这种器件仍具有高稳定的工作特性,性能没有发生显著的变化。这些器件只须抽一次真空就可完全用真空淀积方法制成,各种导电、绝缘和半导体薄膜,依次通过精密对准的金属掩模沉积。
This paper reports the experimental results of a lead-sulfide insulated gate field effect transistor. It uses the gate electrode to achieve detection of the modulation. Adding a negative gate potential results in depletion of n-type PbS film carriers with a 200-fold improvement in detection while maintaining the same noise. A detection of 2 × 10 ~ (10) cm ~ (1/2) / W (173 ° K, 500 Hz) was obtained in a 180 ° field of view and a 300 ° K background. It was found that after 18 months under laboratory environmental conditions, this device still has a high stability of the operating characteristics, performance did not change significantly. These devices can be made entirely by vacuum deposition using only a vacuum and a variety of conductive, insulating, and semiconductor films are sequentially deposited through precision-aligned metal masks.