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在国内首次利用LPE生长技术在n-InP(100)衬底上成功地生长1.35μm InGaAsP分别限制单量子阱结构。通过对样品的横截面进行的TEM观测,量子阱的阱宽和过渡层的厚度分别为160A和30A。在10K和77K光致发光谱测量中,我们观察到n=1的子能级上电子到重、轻空穴带很强的自由激子跃迁峰,两峰间隔为8.3meV,在低温条件下光致发光谱的半高宽度为20meV。
The first successful growth of 1.35μm InGaAsP on n-InP (100) substrate using LPE growth technology in China limits the single quantum well structure respectively. By TEM observation of the cross section of the sample, the well width of the quantum well and the thickness of the transition layer were 160A and 30A, respectively. In the 10K and 77K photoluminescence measurements, we observed a strong free-exciton transition peak on the n = 1 sub-level electron-to-light and light-hole band with a peak separation of 8.3 meV at low temperature The half width of the photoluminescence spectrum is 20 meV.