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本文利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同生工艺条件下的InxGa1-xN薄膜的制备,并通过XRD、SEM、AFM等测量分析方法系统研究了生长工艺参数对InxGa1-xN薄膜的组分和性质的影响。InxGa1-xN薄膜的制备包括蓝宝石衬底表面上GaN缓冲层的生长以及缓冲层上InxGa1-xN薄膜的沉积两个过程。通过对所制备InxGa1-xN薄膜的XRD、SEM、AFM分析发现,调节生长温度和TMGa的流量可以有效控制InxGa1-xN薄膜中In的组分,并且随着生长温度的升高,InxGa1-xN薄膜的表面缺陷减少。
In this paper, the MOCVD method was used to fabricate InxGa1-xN thin films on sapphire substrates with (0001) orientation. The InxGa1-xN thin films were grown by the methods of XRD, SEM and AFM. Effect of film composition and properties. The preparation of InxGa1-xN thin films includes the growth of GaN buffer layer on the surface of sapphire substrate and the deposition of InxGa1-xN thin film on the buffer layer. Through the XRD, SEM and AFM analysis of InxGa1-xN thin films, we found that the composition of In in InxGa1-xN thin films can be effectively controlled by adjusting the growth temperature and the flow rate of TMGa, and the InxGa1-xN thin films Decreased surface defects.