XPS STUDIES OF IRRADIATED HARD AND SOFT Si—SiO₂

• 作 者: 刘昶时 赵元富 王忠燕 陈萦 刘芬 赵汝权
• 机 构: XinjiangInstituteofPhysicsAcademiaSinicaUrumqi830011China,LishanInstituteofMicroelectronicsAero-Spac
• 出 处: 核技术：英文版
• 发表日期: 1993年3期
• 关键词: XPS RADIATION HARD RADIATION SOFT Si-SiO₂ Bias field RADI
• 基金项目: This work was supported by Beijing Zhongguancun Associated Center of Analysis and Measurement

The interracial structure of hard and soft oxides grown by dry oxidation on【100】 n-type silicon substrates is examined using high resolution mild X-ray photoelectron spectroscopy (XPS) before and after irradiation. Substantial differences in silicon of si