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将硅(Si)衬底上外延生长的氮化镓(GaN)基LED薄膜,通过电镀的方法转移到铜支撑基板、铜铬支撑基板以及通过压焊的方法转移到新的硅支撑基板,获得了垂直结构蓝光LED器件,并对其老化特性进行了对比研究。研究结果表明,在三种基板中铜支撑基板的器件老化后光电特性最稳定。把这一现象归结于三种样品的应力状态以及基板热导率的不同,其中应力状态可能是影响器件可靠性的最主要因素。
A gallium nitride (GaN) -based LED film epitaxially grown on a silicon (Si) substrate is transferred to a copper supporting substrate, a copper-chromium supporting substrate by a plating method and a new silicon supporting substrate by pressure welding to obtain a The vertical structure of blue LED devices, and the aging characteristics of a comparative study. The results show that the optoelectronic properties of the copper-supporting substrates are the most stable among the three substrates. This phenomenon is attributed to the stress state of the three samples and the thermal conductivity of the substrate, in which the stress state may affect the reliability of the device the most important factor.