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介绍了二次离子发射的局部热平衡（LTE）模型的发展过程及其在GaAs样品SIMS定量分析中的应用，并尝试了用GaAs基体元素作内标的定量分析方法，取得了较好的结果。
The development of local thermal equilibrium (LTE) model for secondary ion emission and its application in quantitative analysis of SIMS of GaAs samples are introduced. The quantitative analysis method using GaAs matrix as internal standard is also discussed. Good results are obtained.