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本文叙述了电化学C-V法测量SI-GaAs和n~+-GaAs衬底上的单层和双层外延层中的载流子浓度分布及其厚度。测量和讨论了亚微米有源层、单层和多层结构中的界面过渡区的特性。
This paper describes the electrochemical C-V method to measure the carrier concentration distribution and the thickness of single-layer and double-layer epitaxial layers on SI-GaAs and n ~ + -GaAs substrates. The characteristics of the interfacial transition region in the submicron active layer, monolayer and multilayer structures were measured and discussed.