1.3μm AlGaInAs/InP量子阱激光器材料研究

• 作 者: 陈宏泰 车相辉 张宇 赵润 杨红伟 余般梅 王晶 位永平 林琳
• 机 构: 中国电子科技集团公司第十三研究所,重庆航伟光电科技有限公司,
• 出 处: 微纳电子技术
• 发表日期: 2013年04期
• 关键词: 1.3μm FP激光器材料 无致冷 AlGaInAs/InP MOCVD

设计制作了适用于无致冷工作的通讯用1.3μm量子阱激光器材料,并制作成单模芯片进行特性分析研究。采用金属有机化学气相沉积(MOCVD)工艺生长了AlGaInAs/InP应变补偿量子阱材料,采用此外延材料制作的脊宽为2.5μm脊形波导结构FP单模激光器芯片,解理为250,500和750μm不同腔长,进行了内部参数提取,内量子效率ηi为76%、内损耗αi为7.06/cm、模式增益Γg0为81.90/cm、透明电流密度Jtr为1 045 A/cm2。对250μm腔长管芯镀膜,进行电光特性测试,室温性能指标为:阈值电流Ith<10 mA,斜率效率η=0.6 W/A,达到国际同类产品水平,实现1.3μm FP材料国产化。

The 1.3μm QW laser material suitable for communication without refrigeration is designed and manufactured and the single-mode chip is fabricated for the characterization and research. The AlGaInAs / InP strain compensated quantum well material is grown by metal organic chemical vapor deposition (MOCVD) process. The ridge width of 2.5μm ridge waveguide FP single mode laser chip fabricated by this epitaxial material is cleaved into 250,500 and 750μm different cavities The internal quantum efficiency ηi was 76%, the internal loss αi was 7.06 / cm, the mode gain Γg0 was 81.90 / cm and the transparent current density Jtr was 1 045 A / cm2. The test of electro-optical properties was carried out on the 250μm long cavity core. The room temperature performance index was: threshold current Ith <10 mA, slope efficiency η = 0.6 W / A, which reached the level of similar products in the world.