An ultra-low-power CMOS temperature sensor for RFID applications

• 作 者: 徐琮辉 高佩君 车文毅 谈熙 闫娜 闵昊
• 机 构: State Key Laboratory of ASIC & System, Fudan University,
• 出 处: 半导体学报
• 发表日期: 2009年04期
• 关键词: readout converter analog calibration delta sigma bipolar transistor challenging

An ultra-low-power CMOS temperature sensor with analog-to-digital readout circuitry for RFID appli- cations was implemented in a 0.18-μm CMOS process. To achieve ultra-low power consumption, an error model is proposed and the corresponding novel temperature sensor front-end with a new double-measure method is presented. Analog-to-digital conversion is accomplished by a sigma-delta converter. The complete system consumes only 26 μA @ 1.8 V for continuous operation and achieves an accuracy of ±0.65 °C from –20 to 120 °C after calibration at one temperature.

An ultra-low-power CMOS temperature sensor with analog-to-digital readout circuitry for RFID applications was implemented in a 0.18-μm CMOS process. To achieve ultra-low power consumption, an error model is proposed and the corresponding novel temperature Analog-to-digital conversion is accomplished by a sigma-delta converter. The complete system consumes only 26 μA @ 1.8 V for continuous operation and achieves an accuracy of ± 0.65 ° C from -20 to 120 ° C after calibration at one temperature.